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UNISONIC TECHNOLOGIES CO., LTD 4N80
Preliminary Power MOSFET
4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N80 is a N-channel mode Power FET. It uses UTC's advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N80 is universally applied in high efficiency switch mode power supply.
1 TO-220
1
TO-220F
1
TO-220F1
FEATURES
* 4.0A, 800V, RDS(on)=3.6 @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 4N80L-TA3-T 4N80G-TA3-T 4N80L-TF3- T 4N80G-TF3- T 4N80L-TF1- T 4N80G-TF1- T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-220F1 S: Source 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tube
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Preliminary
Power MOSFET
UNIT V V A A mJ mJ V/ns W W C C
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 800 Gate-Source Voltage VGSS 30 Continuous ID 4.0 Drain Current 15.6 Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 460 Avalanche Energy 13 Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 TO-220 106 Power Dissipation PD TO-220F/TO-220F1 36 Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER TO-220 Junction to Ambient TO-220F/TO-220F1 TO-220 Junction to Case TO-220F/TO-220F1 SYMBOL JA JC RATINGS 62.5 62.5 1.18 3.47 UNIT C/W C/W C/W C/W
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PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
SYMBOL BVDSS TEST CONDITIONS MIN 800 0.95 10 100 100 -100 3.0 2 3.8 680 75 8.6 19 4.2 9.1 16 45 35 35 5.0 3.6 TYP MAX UNIT V V/C A A nA nA V S pF pF pF nC nC nC ns ns ns ns A A V ns C
VGS=0V, ID=250A ID=250A, Breakdown Voltage Temperature Coefficient BVDSS/TJ Referenced to 25C VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125C Forward VDS=0V ,VGS=30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A Forward Transconductance gFS VDS=50V, ID=2A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=640V, VGS=10V, ID=4A Gate-Source Charge QGS (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=400V, ID=4A, RG=25 (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =4A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=4A, dIF/dt=100A/s (Note 4) Body Diode Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=57mH, IAS=4A, VDD= 50V, RG=25, Starting TJ=25C 3. ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ=25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
880 100 12 25
40 100 80 80 3.9 15.6 1.4
575 3.65
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT RG
+ VDS L ISD
VGS
VDD Driver Same Type as DUT
dv/dt controlled by RG ISD controlled by pulse period
VGS (Driver)
D=
Gate Pulse Width Gate Pulse Period
10V
IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
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www.unisonic.com.tw
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Gate Charge Test Circuit VGS QG
Preliminary
Power MOSFET
Gate Charge Waveforms
Same Type as DUT 12V 200nF 50k VGS DUT 3mA 300nF VDS
10V QGS
QGD
Charge
Unclamped Inductive Switching Test Circuit VDS RG ID
Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD
10V tP DUT VDD VDD
VDS(t) Time
tP
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Preliminary
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UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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www.unisonic.com.tw
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